MMBT5551-13
200 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR

From DIODES Incorporated

StatusACTIVE-UNCONFIRMED
Collector Current-Max (IC)0.2000 A
Collector-emitter Voltage-Max160 V
ConfigurationSINGLE
DC Current Gain-Min (hFE)30
Mfr Package DescriptionPLASTIC PACKAGE-3
Number of Elements1
Number of Terminals3
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor PolarityNPN
Transistor TypeGENERAL PURPOSE SMALL SIGNAL
Transition Frequency-Nom (fT)100 MHz

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