Product Datasheet Search Results:
9 Pages, 240 KB, Original- TPCA8063-H
- Toshiba
- TPCA8063-H
Product Details Search Results:
Toshiba.co.jp/TPCA8063-H
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"125 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0087 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"66 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transistor A...
1524 Bytes - 04:12:49, 19 May 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TPCA8063-H.pdf | 0.23 | 1 | Request |
