Did you mean: 20PT8052
Product Datasheet Search Results:
2 Pages, 48 KB, Original- APT8052BFLL
- Advanced Power Technology
- POWER MOS 7 800V 15A 0.520 Ohm
2 Pages, 47 KB, Original- APT8052BLL
- Advanced Power Technology
- POWER MOS 7 800V 15A 0.520 Ohm
2 Pages, 48 KB, Original- APT8052SFLL
- Advanced Power Technology
- POWER MOS 7 800V 15A 0.520 Ohm
2 Pages, 47 KB, Original- APT8052SLL
- Advanced Power Technology
- POWER MOS 7 800V 15A 0.520 Ohm
4 Pages, 47 KB, Original- APT8056BVFR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
4 Pages, 43 KB, Original- APT8056BVR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
4 Pages, 45 KB, Original- APT8058HVR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
2 Pages, 155 KB, Original- 20PT8052
- Bothhand Enterprise, Inc.
- 10 BASE TWO PORT PULSE TRANSFORMER
2 Pages, 155 KB, Original- 20PT8053
- Bothhand Enterprise, Inc.
- 10 BASE TWO PORT PULSE TRANSFORMER
1 Pages, 71 KB, Original- APT8056BVR
- Easy Magnet Corp.
- Surface Mount Beads/NB Type
5 Pages, 160 KB, Original- APT8052BFLLG
- Microchip Technology
- Trans MOSFET N-CH 800V 15A 3-Pin(3+Tab) TO-247 Tube
Product Details Search Results:
Blackbox.com/JPT805-ADH
839 Bytes - 15:37:13, 06 March 2025
Microchip.com/APT8052BFLLG
1010 Bytes - 15:37:13, 06 March 2025
Microchip.com/APT8056BVRG
1030 Bytes - 15:37:13, 06 March 2025
Microsemi.com/APT8052BFLL
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1500 Bytes - 15:37:13, 06 March 2025
Microsemi.com/APT8052BFLLG
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"15(A)","Mounting":"Through Hole","Drain-Source On-Volt":"800(V)","Pin Count":"3 +Tab","Packaging":"Rail/Tube","Power Dissipation":"298(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.52(ohm)","Number of Elements":"1"}...
1493 Bytes - 15:37:13, 06 March 2025
Microsemi.com/APT8052BLL
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1494 Bytes - 15:37:13, 06 March 2025
Microsemi.com/APT8052BLLG
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"15(A)","Mounting":"Through Hole","Drain-Source On-Volt":"800(V)","Packaging":"Rail/Tube","Power Dissipation":"298(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1453 Bytes - 15:37:13, 06 March 2025
Microsemi.com/APT8052SFLL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1504 Bytes - 15:37:13, 06 March 2025
Microsemi.com/APT8052SLL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1498 Bytes - 15:37:13, 06 March 2025
Microsemi.com/APT8056BVFR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1502 Bytes - 15:37:13, 06 March 2025
Microsemi.com/APT8056BVR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1494 Bytes - 15:37:13, 06 March 2025
Microsemi.com/APT8056BVRG
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL",...
1558 Bytes - 15:37:13, 06 March 2025
