Product Datasheet Search Results:

PTFB193404F V1.pdf15 Pages, 230 KB, Original
PTFB193404F V1
Infineon Technologies
RF MOSFET Transistors RF LDMOS FETs 340W 30V 1930-1990 MHz
PTFB193404FV1.pdf14 Pages, 239 KB, Original
PTFB193404FV1
Infineon Technologies Ag
2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
PTFB193404F V1 R250.pdf14 Pages, 507 KB, Original
PTFB193404F V1 R250
Infineon Technologies Ag
Trans RF MOSFET N-CH 65V 7-Pin Case 37275 T/R
PTFB193404FV1R250.pdf14 Pages, 239 KB, Original
PTFB193404FV1R250
Infineon Technologies Ag
2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET

Product Details Search Results:

Infineon.com/PTFB193404F V1
{"Factory Pack Quantity":"35","Technology":"Si","Vds - Drain-Source Breakdown Voltage":"65 V","Transistor Polarity":"N-Channel","Series":"PTFB193404","Brand":"Infineon Technologies","Id - Continuous Drain Current":"2.6 A","Mounting Style":"SMD/SMT","Packaging":"Tray","Product Category":"RF MOSFET Transistors","Output Power":"100 W","Gain":"19 dB","Package / Case":"H-37275-6-2","Vgs - Gate-Source Breakdown Voltage":"10 V","Part # Aliases":"PTFB193404FV1XWSA1 SP000865988","Frequency":"1.93 GHz to 1.99 GHz","T...
1642 Bytes - 03:13:19, 17 March 2025
Infineon.com/PTFB193404FV1
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","...
1474 Bytes - 03:13:19, 17 March 2025
Infineon.com/PTFB193404F V1 R250
{"Product Category":"RF\u00a0MOSFET","Frequency (Min)":"1930(MHz)","Number of Elements":"2","Channel Mode":"Enhancement","Mounting":"Surface Mount","Rad Hardened":"No","Frequency (Max)":"1990(MHz)","Channel Type":"N","Packaging":"Tape and Reel","Operating Temp Range":"-40C to 200C","Drain Efficiency (Typ)":"36(%)","Power Gain (Typ)@Vds":"19(dB)","Screening Level":"Automotive","Pin Count":"7","Drain Source Voltage (Max)":"65(V)","Manufacturer":"INFINEON TECHNOLOGIES AG"}...
1313 Bytes - 03:13:19, 17 March 2025
Infineon.com/PTFB193404FV1R250
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","...
1496 Bytes - 03:13:19, 17 March 2025
Infineon.com/PTFB193404FV1XWSA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"65 V","Description":"Value","Channel Mode":"Enhancement","Maximum Gate Source Voltage":"-6 to 10 V","Mounting":"Surface Mount","Package":"7Case 37275","Operating Temperature":"-40 to 200 \u00b0C","RDS-on":"50@10V mOhm","Manufacturer":"Infineon Technologies"}...
1392 Bytes - 03:13:19, 17 March 2025

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