Product Datasheet Search Results:
- 1N5449B
- Aeroflex / Metelics
- 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- 1N5449BCO
- Aeroflex / Metelics
- 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
- JAN1N5449B
- Aeroflex / Metelics
- 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- JANTX1N5449B
- Aeroflex / Metelics
- 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- JANTXV1N5449B
- Aeroflex / Metelics
- 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- 1N5449B
- Api Electronics Group
- VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
- 1N5449B
- Codi Semiconductor, Inc.
- 30V Vrrm, 27pF Capacitance Varactor Diode
- 1N5449B
- Crystalonics
- 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
- 1N5449B
- Motorola / Freescale Semiconductor
- 30V Vrrm, 27pF Capacitance Varactor Diode
- 1N5449B
- Knox Semiconductor, Inc.
- 30V Vrrm, 27pF Capacitance Varactor Diode
- 1N5449B
- Microsemi Corp.
- 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
Product Details Search Results:
Aeroflex.com/1N5449B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"350","Terminal Position":...
1351 Bytes - 05:52:57, 25 September 2026
Aeroflex.com/1N5449BCO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.6","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Diode Cap Tolerance":"5 %","Quality Factor-Min":"350","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSP...
1225 Bytes - 05:52:57, 25 September 2026
Aeroflex.com/JAN1N5449B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"500","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE D...
1323 Bytes - 05:52:57, 25 September 2026
Aeroflex.com/JANTX1N5449B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"500","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE D...
1334 Bytes - 05:52:57, 25 September 2026
Aeroflex.com/JANTXV1N5449B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"500","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE D...
1341 Bytes - 05:52:57, 25 September 2026
Apitech.com/1N5449B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"3...
1382 Bytes - 05:52:57, 25 September 2026
Crystalonics.com/1N5449B
{"Status":"ACTIVE","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"350","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configu...
1252 Bytes - 05:52:57, 25 September 2026
Microsemi.com/1N5449B
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"27 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"5 %","Quality Factor-Min":"350","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND"...
1269 Bytes - 05:52:57, 25 September 2026
Various/1N5449B
{"C1/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"350","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 05:52:57, 25 September 2026
Various/1N5449BCHIP
{"C1/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"350","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"27p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
743 Bytes - 05:52:57, 25 September 2026













