Product Datasheet Search Results:

2N3749.pdf5 Pages, 295 KB, Scan
2N3749
Api Electronics Group
5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111
2N3749.pdf1 Pages, 55 KB, Original
2N3749
Api Electronics, Inc.
Short form transistor data
2N3749JAN.pdf2 Pages, 218 KB, Original
2N3749JAN
Api Electronics, Inc.
Short form transistor data
2N3749JTX.pdf2 Pages, 218 KB, Original
2N3749JTX
Api Electronics, Inc.
Short form transistor data
2N3749JTXV.pdf2 Pages, 218 KB, Original
2N3749JTXV
Api Electronics, Inc.
Short form transistor data
JAN2N3749.pdf2 Pages, 218 KB, Original
JAN2N3749
Api Electronics, Inc.
5 Amp NPN Transistors
JTX2N3749.pdf2 Pages, 218 KB, Original
JTX2N3749
Api Electronics, Inc.
5 Amp NPN Transistors
JTXV2N3749.pdf2 Pages, 218 KB, Original
JTXV2N3749
Api Electronics, Inc.
5 Amp NPN Transistors
2N3749.pdf1 Pages, 63 KB, Original
2N3749
Diode Transistor Co., Inc.
Transistor Short Form Data

Product Details Search Results:

Apitech.com/2N3749
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"SOLDER LUG","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"60 MHz","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE",...
1234 Bytes - 01:00:58, 14 May 2025
Dla.mil/2N3749+JAN
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-111","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"40M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JAN2N3749","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
993 Bytes - 01:00:58, 14 May 2025
Dla.mil/2N3749+JANTX
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-111","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"40M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTX2N3749","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
1005 Bytes - 01:00:58, 14 May 2025
Dla.mil/2N3749+JANTXV
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-111","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"40M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTXV2N3749","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
1011 Bytes - 01:00:58, 14 May 2025
Microchip.com/TC52N3749ECT
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1492 Bytes - 01:00:58, 14 May 2025
Microchip.com/TC52N3749ECTTR
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1506 Bytes - 01:00:58, 14 May 2025
Microsemi.com/2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1216 Bytes - 01:00:58, 14 May 2025
Microsemi.com/2N3749JANTXV
{"Collector Current (DC) ":"5 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"5 A","Collector-Emitter Voltage":"80 V","Mounting":"Stud","Emitter-Base Voltage":"8 V","Rad Hardened":"No","DC Current Gain (Min)":"40","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"2 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-59","Output Power (Max)":"Not Required W","DC Current Gain":"40","Emitter-Base Voltage (Max)":"8 V","Collector-Base Voltag...
1613 Bytes - 01:00:58, 14 May 2025
Microsemi.com/JAN2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"SOLDER LUG","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package...
1287 Bytes - 01:00:58, 14 May 2025
Microsemi.com/JANTX2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1248 Bytes - 01:00:58, 14 May 2025
Microsemi.com/JANTXV2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1254 Bytes - 01:00:58, 14 May 2025
N_a/2N3749
{"Category":"NPN Transistor, Transistor","Amps":"5A","MHz":">40 MHz","Volts":"100V"}...
516 Bytes - 01:00:58, 14 May 2025

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
3N3749.pdf0.101Request