Product Datasheet Search Results:
2 Pages, 535 KB, Original- 2N4859A
- Central Semiconductor Corp.
- 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
2 Pages, 535 KB, Original- 2N4859ALEADFREE
- Central Semiconductor Corp.
- 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
2 Pages, 275 KB, Scan- 2N4859A
- Motorola / Freescale Semiconductor
- JFET SWITCHING N-CHANNEL-DEPLETION
1 Pages, 41 KB, Scan- 2N4859A
- Micro Electronics
- N-Channel JFETs
1 Pages, 39 KB, Scan- 2N4859A
- National Semiconductor
- Pro-Electron Transistor Datasheets
4 Pages, 293 KB, Original- 2N4859A
- Semiconductors, Inc.
- N-Channel Junction Field Effect Transistors
3 Pages, 216 KB, Scan- 2N4859A
- Solid State Inc.
- Trans JFET N-CH 30V 3-Pin TO-18
1 Pages, 63 KB, Scan- 2N4859A
- Solitron Devices, Inc.
- N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
Product Details Search Results:
Centralsemi.com/2N4859A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"25 ohm","Feedback Cap-Max (Crss)":"4 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND...
1320 Bytes - 12:23:29, 14 November 2024
Centralsemi.com/2N4859ALEADFREE
{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"25 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"30 V","Transistor Application":"SWITCHING","Operatin...
1421 Bytes - 12:23:29, 14 November 2024
Interfet.com/2N4859A
{"Mounting Style":"Through Hole","Vds - Drain-Source Breakdown Voltage":"15 V","Transistor Polarity":"N-Channel","Gate-Source Cutoff Voltage":"- 10 V","Brand":"InterFET","Id - Continuous Drain Current":"500 pA","Pd - Power Dissipation":"1.8 W","Packaging":"Reel","Product Category":"JFET","Rds On - Drain-Source Resistance":"25 Ohms","Package / Case":"TO-18-3","Drain-Source Current at Vgs=0":"50 mA","Vgs - Gate-Source Breakdown Voltage":"- 30 V","Configuration":"Single","Technology":"Si","RoHS":"Details","Man...
1496 Bytes - 12:23:29, 14 November 2024
Solid_state_inc_/2N4859A
{"Operating Temperature (Max)":"200C","Operating Temperature (Min)":"-65C","Mounting":"Through Hole","Drain-Gate Voltage (Max)":"-30(V)","Channel Type":"N","Drain-Source Volt (Max)":"30(V)","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-18","Configuration":"Single","Pin Count":"3","Gate-Source Voltage (Max)":"-30(V)"}...
1288 Bytes - 12:23:29, 14 November 2024
Solidstateinc.com/2N4859A
{"Breakdown Voltage Vbr:":"-30 V","Gate-Source Cutoff Voltage Vgs(off) Max:":"-10 V","Zero Gate Voltage Drain Current Idss Min:":"50 mA","Transistor Type:":"JFET","MSL:":"-","No. of Pins:":"3","Power Dissipation Pd:":"300 mW","Transistor Case Style:":"TO-18","Zero Gate Voltage Drain Current Idss Max:":"50 mA","Operating Temperature Max:":"-","Zero Gate Voltage Drain Current Idss:":"50mA","SVHC:":"No SVHC (15-Jun-2015)"}...
1390 Bytes - 12:23:29, 14 November 2024
Solitrondevices.com/2N4859A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain-source On Resistance-Max":"25 ohm","Feedback Cap-Max (Crss)":"4 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of ...
1237 Bytes - 12:23:29, 14 November 2024
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