Product Datasheet Search Results:
- 2N7002TR
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002TR13
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002TR13LEADFREE
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002TRLEADFREE
- Central Semiconductor Corp.
- 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
- 2N7002TR
- Fairchild Semiconductor
- FET Transistor, Enhancement, N Channel, 1V Threshold, ID 0.115A, Tape and Reel
- 2N7002TR
- Stmicroelectronics
- TRANS MOSFET N-CH 60V 0.25A 3SOT-23-3L T/R
- XP262N7002TR-G
- Torex Semiconductor
- Trans MOSFET N-CH 60V 0.3A T/R
Product Details Search Results:
Centralsemi.com/2N7002TR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application"...
1429 Bytes - 14:17:36, 22 December 2024
Centralsemi.com/2N7002TR13
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application"...
1440 Bytes - 14:17:36, 22 December 2024
Centralsemi.com/2N7002TR13LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1539 Bytes - 14:17:36, 22 December 2024
Centralsemi.com/2N7002TRLEADFREE
{"Terminal Finish":"MATTE TIN (315)","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1527 Bytes - 14:17:36, 22 December 2024
Fairchildsemi.com/2N7002TR
{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"200m","@V(GS) (V) (Test Condition)":"5.0","r(DS)on Max. (Ohms)":"7.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"800m","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"80m","V(BR)GSS (V)":"40","@I(D) (A) (Test Condition)":"500m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.5","V(GS)th Min. (V)":"1.0","Package":"TO-236AB","Military":"N","I(DSS) Max. (A)":"1.0u","@(VDS) (V) (Test Condition)":"20","V(BR)DSS ...
1139 Bytes - 14:17:36, 22 December 2024
Torex_semiconductor/XP262N7002TR-G
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.4(W)","Continuous Drain Current":"0.3(A)","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Type":"Power MOSFET","Number of Elements":"1"}...
1352 Bytes - 14:17:36, 22 December 2024