Product Datasheet Search Results:
- BSC160N10NS3G
- Infineon Technologies Ag
- 8.8 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
- BSC160N10NS3GATMA1
- Infineon Technologies
- MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
Product Details Search Results:
Infineon.com/BSC160N10NS3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0160 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"168 A","Channel Type":"N-CHANNEL","FET Tec...
1595 Bytes - 16:26:44, 01 November 2024
Infineon.com/BSC160N10NS3GATMA1
{"Product Category":"MOSFET","Series":"BSC160N10","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1199 Bytes - 16:26:44, 01 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSC160N10NS3G.pdf | 0.53 | 1 | Request |