Product Datasheet Search Results:
8 Pages, 326 KB, Original- BSM25GD120D
- Infineon Technologies [eupec]
- BSM25GD120D
9 Pages, 142 KB, Original- BSM25GD120D2
- Infineon Technologies [eupec]
- BSM25GD120D2
9 Pages, 278 KB, Original- BSM25GD120DLC
- Infineon Technologies [eupec]
- BSM25GD120DLC
9 Pages, 118 KB, Original- BSM25GD120DLCE3224
- Eupec Power Semiconductors
- IGBT Module
9 Pages, 110 KB, Original- BSM25GD120DN1
- Infineon Technologies [eupec]
- BSM25GD120DN1
9 Pages, 205 KB, Original- BSM25GD120DN2
- Eupec Power Semiconductors
- IGBT Power Module
10 Pages, 226 KB, Original- BSM25GD120DN2E3224
- Eupec Power Semiconductors
- IGBT Power Module
9 Pages, 205 KB, Original- BSM25GD120DN2E324
- Eupec Power Semiconductors
- IGBT, IGBT Power Module, VCG 1200 V, VCE 1200 V, IC 35 A
10 Pages, 226 KB, Original- BSM25GD120DNE32242
- Eupec Power Semiconductors
- IGBT Power Module
10 Pages, 248 KB, Original- BSM25GD120DN2
- Infineon Technologies
- IGBT Modules 1200V 25A FL BRIDGE
10 Pages, 248 KB, Original- BSM25GD120DN2BOSA1
- Infineon Technologies Ag
- Trans IGBT Module N-CH 1200V 35A 200000mW
Product Details Search Results:
Infineon.com/BSM25GD120D
{"Absolute Max. Power Diss. (W)":"300","V(CE)sat Max.(V)":"2.8","V(BR)CES (V)":"1.2k","I(C) Abs.(A) Collector Current":"25","Package":"Module-q","Circuits Per Package":"1"}...
691 Bytes - 18:14:02, 10 April 2025
Infineon.com/BSM25GD120DN2
{"Gate-Emitter Leakage Current":"180 nA","Continuous Collector Current at 25 C":"35 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"200 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPACK 2A","Configuration":"Hex","Maximu...
1628 Bytes - 18:14:02, 10 April 2025
Infineon.com/BSM25GD120DN2BOSA1
{"Collector Current (DC) ":"35(A)","Operating Temperature (Min)":"-40C","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Configuration":"Hex"}...
1366 Bytes - 18:14:02, 10 April 2025
Infineon.com/BSM25GD120DN2E3224
{"Gate-Emitter Leakage Current":"180 nA","Continuous Collector Current at 25 C":"35 A","Product Category":"IGBT Modules","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"200 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EconoPACK 2","Configuration":"Hex","Maximum ...
1588 Bytes - 18:14:02, 10 April 2025
Infineon.com/BSM25GD120DN2E3224BOSA1
943 Bytes - 18:14:02, 10 April 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM25GD120D.pdf | 0.12 | 1 | Request | |
| BSM25GD120DLC.pdf | 0.12 | 1 | Request | |
| BSM25GD120D2.pdf | 0.13 | 1 | Request | |
| BSM25GD120DN2E3224.pdf | 0.22 | 1 | Request | |
| BSM25GD120DN2.pdf | 0.20 | 1 | Request |
