Product Datasheet Search Results:

IRF532.pdf6 Pages, 181 KB, Scan
IRF532
Fairchild Semiconductor
N-Channel Power MOSFETs, 20 A, 60-100 V
IRF532.pdf4 Pages, 200 KB, Original
IRF532.pdf4 Pages, 200 KB, Original
IRF532
Frederick Components
Power MOSFET Selection Guide
IRF532.pdf2 Pages, 158 KB, Scan
IRF532
Motorola / Freescale Semiconductor
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
IRF532.pdf5 Pages, 163 KB, Scan
IRF532
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A.
IRF532.pdf2 Pages, 128 KB, Scan
IRF532
General Electric
Power Transistor Data Book 1985
IRF532.pdf5 Pages, 170 KB, Scan
IRF532
Harris Semiconductor
Power MOSFET Data Book 1990
IRF532R.pdf5 Pages, 390 KB, Scan
IRF532R
Harris Semiconductor
N-Channel Power MOSFETs Avalanche Energy Rated
IRF532.pdf1 Pages, 44 KB, Original
IRF532
International Rectifier
TO-220 N-Channel HEXFET Power MOSFET
IRF532R.pdf1 Pages, 41 KB, Original
IRF532R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRF532.pdf5 Pages, 280 KB, Scan
IRF532
N/a
FET Data Book
IRF532R.pdf1 Pages, 85 KB, Scan
IRF532R
N/a
Shortform Datasheet & Cross References Data

Product Details Search Results:

St.com/IRF532FI
{"C(iss) Max. (F)":"850p","Absolute Max. Power Diss. (W)":"35","r(DS)on Max. (Ohms)":"230m","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.3","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"75n","V(BR)DSS (V)":"100","t(f) Max. (s) Fall time.":"45n","g(fs) Min. (S) Trans. conduct.":"5.1","I(D) Abs. Drain Current (A)":"8.0"}...
913 Bytes - 09:05:28, 21 September 2024
Various/IRF532R
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"79","g(fs) Max, (S) Trans. conduct,":"7.6","I(D) Abs. Max.(A) Drain Curr.":"8.3","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"35n","r(DS)on Max. (Ohms)":"250m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"48","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"5.1","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.3","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1295 Bytes - 09:05:28, 21 September 2024