Product Datasheet Search Results:
49 Pages, 548 KB, Original- IRF640
- Fairchild Semiconductor
- Trans MOSFET N-CH 200V 18A 3-Pin (3+Tab) TO-220AB
7 Pages, 261 KB, Original- IRF640A
- Fairchild Semiconductor
- Advanced Power MOSFET
7 Pages, 261 KB, Original- IRF640AJ69Z
- Fairchild Semiconductor Corporation
- 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 915 KB, Original- IRF640B
- Fairchild Semiconductor
- 200 V N-Channel MOSFET
11 Pages, 154 KB, Original- IRF640N
- Fairchild Semiconductor
- N-Channel Power MOSFETs 200V, 18A, 0.15ohm
11 Pages, 154 KB, Original- IRF640NL
- Fairchild Semiconductor
- N-Channel Power MOSFETs 200V, 18A, 0.15ohm
11 Pages, 154 KB, Original- IRF640NS
- Fairchild Semiconductor
- N-Channel Power MOSFETs 200V, 18A, 0.15ohm
4 Pages, 200 KB, Original- IRF640
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF640
- Frederick Components
- Power MOSFET Selection Guide
2 Pages, 127 KB, Scan- IRF640
- General Electric
- Power Transistor Data Book 1985
5 Pages, 201 KB, Scan- IRF640
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 204 KB, Scan- IRF640R
- Harris Semiconductor
- Power MOSFET Data Book 1990
12 Pages, 246 KB, Original- IRF640NHR
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab)
11 Pages, 338 KB, Original- IRF640NLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
11 Pages, 338 KB, Original- IRF640NPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube
12 Pages, 246 KB, Original- IRF640NS
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
12 Pages, 246 KB, Original- IRF640NSHR
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab)
11 Pages, 338 KB, Original- IRF640NSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK Tube
12 Pages, 246 KB, Original- IRF640NSTRLHR
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A Automotive 3-Pin(2+Tab) D2PAK T/R
11 Pages, 338 KB, Original- IRF640NSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
12 Pages, 246 KB, Original- IRF640NSTRRHR
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A Automotive 3-Pin(2+Tab) D2PAK
11 Pages, 338 KB, Original- IRF640NSTRRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
7 Pages, 62 KB, Original- IRF640
- Intersil Corporation
- 18A, 200V, 0.180 ?, N-Channel Power MOSFETs
6 Pages, 178 KB, Scan- IRF640
- International Rectifier
- HEXFET Power Mosfet
10 Pages, 352 KB, Original- IRF640L
- International Rectifier
- HEXFET Power MOSFET
10 Pages, 215 KB, Original- IRF640LPBF
- International Rectifier
- 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
12 Pages, 249 KB, Original- IRF640N
- International Rectifier
- MOSFET N-CH 200V 18A TO-220AB - IRF640N
12 Pages, 246 KB, Original- IRF640NHR
- International Rectifier
- Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab)
12 Pages, 249 KB, Original- IRF640NL
- International Rectifier
- MOSFET N-CH 200V 18A TO-262 - IRF640NL
11 Pages, 338 KB, Original- IRF640NLPBF
- International Rectifier
- MOSFET N-CH 200V 18A TO-262 - IRF640NLPBF
11 Pages, 338 KB, Original- IRF640NPBF
- International Rectifier
- MOSFET N-CH 200V 18A TO-220AB - IRF640NPBF
12 Pages, 249 KB, Original- IRF640NS
- International Rectifier
- IRF640NS
12 Pages, 246 KB, Original- IRF640NSHR
- International Rectifier
- Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab)
11 Pages, 338 KB, Original- IRF640NSPBF
- International Rectifier
- MOSFET N-CH 200V 18A D2PAK - IRF640NSPBF
11 Pages, 163 KB, Original- IRF640NSTR
- International Rectifier
- N-channel power MOSFET for fast switching applications, 200V, 18A
11 Pages, 338 KB, Original- IRF640NSTRL
- International Rectifier
- 18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
12 Pages, 246 KB, Original- IRF640NSTRLHR
- International Rectifier
- Trans MOSFET N-CH Si 200V 18A Automotive 3-Pin(2+Tab) D2PAK T/R
11 Pages, 338 KB, Original- IRF640NSTRLPBF
- International Rectifier
- MOSFET N-CH 200V 18A D2PAK - IRF640NSTRLPBF
11 Pages, 338 KB, Original- IRF640NSTRR
- International Rectifier
- MOSFET N-CH 200V 18A D2PAK - IRF640NSTRR
12 Pages, 246 KB, Original- IRF640NSTRRHR
- International Rectifier
- Trans MOSFET N-CH Si 200V 18A Automotive 3-Pin(2+Tab) D2PAK
11 Pages, 338 KB, Original- IRF640NSTRRPBF
- International Rectifier
- MOSFET N-CH 200V 18A D2PAK - IRF640NSTRRPBF
6 Pages, 178 KB, Scan- IRF640PBF
- International Rectifier
- 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
1 Pages, 41 KB, Original- IRF640R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
10 Pages, 215 KB, Original- IRF640S
- International Rectifier
- Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
10 Pages, 215 KB, Original- IRF640SPBF
- International Rectifier
- 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
10 Pages, 215 KB, Original- IRF640STR
- International Rectifier
- 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
10 Pages, 215 KB, Original- IRF640STRL
- International Rectifier
- 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Product Details Search Results:
Fairchildsemi.com/IRF640
887 Bytes - 23:59:05, 19 September 2024
Fairchildsemi.com/IRF640AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"72 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"216 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Ty...
1490 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Rad Hardened":"No","Package Type":"TO-220AB","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1460 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-262","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1533 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1535 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NS
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1495 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NSHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1492 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1523 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NSTRLHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1525 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1538 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NSTRRHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1521 Bytes - 23:59:05, 19 September 2024
Infineon.com/IRF640NSTRRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1539 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640N
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220AB PKG","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1160pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF640N","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"150W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole"...
1552 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NHR
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1450 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-262-3 Long Leads","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1160pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-262","Datasheets":"IRF640N","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"150W","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO...
1592 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","Datasheets":"IRF640N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxi...
1975 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-220AB PKG","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","Datasheets":"IRF640N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Package Drawing Update 19\...
1902 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NS
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"247 mJ","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1522 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NSHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1483 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Alternate Assembly Site 11\/Nov\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","Datasheets":"IRF640N(...
1900 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NSTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"247 mJ","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1538 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NSTRLHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"200(V)","Frequency (Max)":"Not Required MHz","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain "...
1722 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NSTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Alternate Assembly Site 11\/Nov\/2013 Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @...
2155 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NSTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"247 mJ","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1540 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NSTRRHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1511 Bytes - 23:59:05, 19 September 2024
Irf.com/IRF640NSTRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Alternate Assembly Site 11\/Nov\/2013 Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @...
2135 Bytes - 23:59:05, 19 September 2024
Nxp.com/IRF640,127
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3, TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"1850pF @ 25V","Series":"TrenchMOS\u2122","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF640, IRF640S","Rds On (Max) @ Id, Vgs":"180 mOhm @ 8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"136W","Package \/ Case":"TO-220-3","Mounting Type":"Thro...
1589 Bytes - 23:59:05, 19 September 2024
Onsemi.com/IRF640
860 Bytes - 23:59:05, 19 September 2024
Siliconix_vishay/IRF640
768 Bytes - 23:59:05, 19 September 2024
Siliconix_vishay/IRF640PBF
788 Bytes - 23:59:05, 19 September 2024
Siliconix_vishay/IRF640SPBF
794 Bytes - 23:59:05, 19 September 2024
St.com/IRF640
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3, TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1560pF @ 25V","Series":"MESH OVERLAY\u2122","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF640(FP)","Rds On (Max) @ Id, Vgs":"180 mOhm @ 9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"125W","Package \/ Case":"TO-220-3","Mounting Type":...
1558 Bytes - 23:59:05, 19 September 2024
St.com/IRF640FP
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220FP","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"MESH OVERLAY\u2122","Standard Package":"1,000","Supplier Device Package":"TO-220FP","Datasheets":"IRF640(FP)","Rds On (Max) @ Id, Vgs":"180 mOhm @ 9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"40W","Package \/ Case":"TO-220-3 Full Pack","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)...
1531 Bytes - 23:59:05, 19 September 2024
St.com/IRF640S
905 Bytes - 23:59:05, 19 September 2024
St.com/IRF640ST4
869 Bytes - 23:59:05, 19 September 2024
Tnb.com/DIRF64040
760 Bytes - 23:59:05, 19 September 2024
Various/IRF640CF
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"1.6n","t(r) Max. (s) Rise time":"60n","I(GSS) Max. (A)":"500n","I(DSS) Min. (A)":"250u","V(BR)DSS (V)":"200","t(f) Max. (s) Fall time.":"60n","g(fs) Min. (S) Trans. conduct.":"6.0","I(D) Abs. Drain Current (A)":"20","Package":"TO-220AB","Military":"N","r(DS)on Max. (Ohms)":"144m"}...
798 Bytes - 23:59:05, 19 September 2024
Various/IRF640R
{"C(iss) Max. (F)":"1.3n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"10","I(D) Abs. Max.(A) Drain Curr.":"11","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"68n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"72","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"6.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"10","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packag...
1293 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1456 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"72 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Packag...
1395 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1457 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640-002
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1446 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640-002PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1508 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640-003
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1443 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640-003PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1508 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640-004
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1443 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640-004PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1506 Bytes - 23:59:05, 19 September 2024
Vishay.com/IRF640-005
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1444 Bytes - 23:59:05, 19 September 2024
